vishay siliconix SUD50P04-08 document number: 65594 s10-0034-rev. a, 11-jan-10 www.vishay.com 1 p-channel 40-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? power switch ? load switch in high current applications ? dc/dc converters product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 40 0.0081 at v gs = - 10 v - 50 d 60 0.0117 at v gs = - 4.5 v - 48 d to-252 s gd top view drain connected to tab ordering information: SUD50P04-08-ge3 (lead (pb)-free and halogen-free) s g d p-channel mosfet notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 50 d a t c = 70 c - 50 d pulsed drain current i dm - 100 avalanche current i as - 46 single avalanche energy a l = 0.1 mh e as 106 mj maximum power dissipation a t c = 25 c p d 73.5 b w t a = 25 c c 2.5 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 50 c/w junction-to-case (drain) r thjc 1.7
www.vishay.com 2 document number: 65594 s10-0034-rev. a, 11-jan-10 vishay siliconix SUD50P04-08 notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = - 250 a - 40 v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 2.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = - 40 v, v gs = 0 v - 1 a v ds = - 40 v, v gs = 0 v, t j = 125 c - 50 v ds = - 40 v, v gs = 0 v, t j = 150 c - 250 on-state drain current a i d(on) v ds - 10 v, v gs = - 10 v - 50 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 22 a 0.0067 0.0081 v gs = - 4.5 v, i d = - 19 a 0.0097 0.0117 forward transconductance a g fs v ds = - 15 v, i d = - 22 a 45 s dynamic b input capacitance c iss v gs = 0 v, v ds = - 20 v, f = 1 mhz 5380 pf output capacitance c oss 570 reverse transfer capacitance c rss 500 total gate charge c q g v ds = - 20 v, v gs = - 10 v, i d = - 20 a 106 159 nc v ds = - 20 v, v gs = - 4.5 v, i d = - 20 a 60 90 gate-source charge c q gs 22 gate-drain charge c q gd 27 gate resistance r g f = 1 mhz 0.4 1.8 3.6 tu r n - o n d e l ay t i m e c t d(on) v dd = - 20 v, r l = 2 i d ? - 10 a, v gen = - 10 v, r g = 1 15 23 ns rise time c t r 12 18 turn-off delay time c t d(off) 70 105 fall time c t f 18 27 drain-source body diode ratings and characteristics t c = 25 c b continuous current i s - 50 a pulsed current i sm - 100 forward voltage a v sd i f = - 10 a, v gs = 0 v - 0.8 - 1.5 v reverse recovery time t rr i f = - 10 a, di/dt = 100 a/s 35 53 ns peak reverse recovery current i rm(rec) - 2 - 3 a reverse recovery charge q rr 33 50 nc
vishay siliconix SUD50P04-08 document number: 65594 s10-0034-rev. a, 11-jan-10 www.vishay.com 3 typical characteristics 25 c, unless otherwise noted output characteristics transfer characteristics transconductance 0 20 40 60 8 0 100 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10 v thr u 5 v v gs =3 v v gs =4 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 2 4 6 8 10 01234 t c = 25 c t c =125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 25 50 75 100 0 1020304050 t c = 125 c t c = - 55 c t c = 25 c - transcond u ctance (s) g fs i d - drain c u rrent (a) on-resistance vs. drain current on-resistance vs. gate-to-source voltage gate charge 0.003 0.006 0.009 0.012 0.015 0204060 8 0 100 v gs =10 v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0.000 0.006 0.012 0.01 8 0.024 0.030 246 8 10 t j = 25 c t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 2 4 6 8 10 0 30 60 90 120 v ds =32 v i d =20a v ds =20 v v ds =10 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 65594 s10-0034-rev. a, 11-jan-10 vishay siliconix SUD50P04-08 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0 2000 4000 6000 8 000 010203040 c iss c oss c rss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) - 50 - 25 0 25 50 75 100 125 150 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 0.5 0. 8 1.1 1.4 1.7 2.0 i d =20a v gs =4.5 v v gs =10 v threshold voltage drain source breakdown vs. junction temperature current derating - 2.5 - 2.2 - 1.9 - 1.6 - 1.3 - 1.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) - 51 - 49 - 47 - 45 - 43 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ds - drain-to-so u rce v oltage ( v ) t j -j u nction temperat u re (c) 0 20 40 60 8 0 0 255075100125150 package limited t c - case temperat u re (c) i d - drain c u rrent (a)
vishay siliconix SUD50P04-08 document number: 65594 s10-0034-rev. a, 11-jan-10 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65594 . single pulse avalanche current capability vs. time time (s) (a) i da v 1 10 100 10 -3 10 -2 10 -1 10 -4 10 -5 t j = 25 c t j = 150 c safe operating area 0.01 0.1 1 10 100 1000 0.1 1 10 100 1s,10s,dc t c = 25 c single p u lse b v dss limited limited b yr ds(on) * 1ms 10 ms, 100 ms 100 a v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 0 1 1 10 -1 10 -4 10 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 d u ty cycle = 0.5 0.05 0.02 single p u lse
package information www.vishay.com vishay siliconix revision: 03-jun-13 1 document number: 71197 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-252aa case outline notes ? dimension l3 is for reference only. ? xian, mingxin, and gem sh actual photo. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters inches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 4.10 - 0.161 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.01 1.52 0.040 0.060 ecn: t13-0359-rev. o, 03-jun-13 ? dwg: 5347
application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
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